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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25ae SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25ae Collector power dissipation TC=25ae Junction temperature Storage temperature 30 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 10 15 0.5 2 W V A A A UNIT V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IC=10A; IB=25mA IC=10A; IB=25mA VCB=100V; IE=0 VCE=100V; IE=0 VEB=7V ;IC=0 IC=10A ; VCE=2V 1000 MIN 100 TYP. 2SD1591 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE MAX UNIT V 1.5 2.0 10 500 5 30000 |I |I V V A A mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1591 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
Price & Availability of 2SD1591 |
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